전북대학교
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- FULL Publication List Please find the link below to access the Google Scholar for the list of all published articles. 2015 Read more
- Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer Beo Deul Ryu et al. ACS Appl. Mater. Interfaces 6, 22451 2014
- Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes Jaehee Cho et al. Electron. Mater. Lett. 10, 1155 2014
- Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks D. Bouangeune et al. J. Korean Phys. Soc. 65, 1106 2014
- Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern Young Jae Park et al. Opt. Express 22, A1553 2014 Read more
- A universal method of producing transparent electrodes using wide-bandgap materials Hee-Dong Kim et al. Adv. Funct. Mater. 24, 1575 2014
- Mesa-free III-V nitride light-emitting diodes with flat surface David S. Meyaard et al. ECS Solid State Letters 3, Q17 2014
- Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch mask Ming Ma et al. J. Vac. Sci. Technol. A 32, 021305 2014 Read more
- Optically functional surface structures for GaN-based light-emitting diodes Ming Ma et al. J. Mater. Chem. C 1, 8134 2013
- GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection David S. Meyaard et al. Appl. Phys. Lett. 103, 201112 2013
- Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes David S. Meyaard et al. Appl. Phys. Lett. 103, 121103 2013
- Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic-filtering contacts Seung Jae Oh et al. J. Mater. Chem. C 1, 5733 2013
- Effect of quantum barrier thickness in the multiple-quantum-well active region of GaInN/GaN LEDs Guan-Bo Lin et al. IEEE Photonics Journal 5, 1600207 2013
- Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer Jun Hyuk Park et al. Appl. Phys. Lett. 103, 061104 2013
- Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop David S. Meyaard et al. Appl. Phys. Lett. 102, 251114 2013
- Efficiency droop in light-emitting diodes: Challenges and countermeasures Jaehee Cho et al. Laser Photonics Rev. 7, 408 2013
- Enhanced omnidirectional photovoltaic performance of solar cells using multiple-discrete-layer tailored- and low-refractive index anti-reflection coatings Xing Yan et al. Adv. Funct. Mater. 23, 583 2013 Read more
- Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings Seung Jae Oh et al. Opt. Express 21, A157 2013 Read more
- Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve Guan-Bo Lin et al. Appl. Phys. Lett. 101, 241104 2012
- Tailored nanoporous coatings fabricated on conformable polymer substrates David J. Poxson et al. ACS Appl. Mater. Interfaces 4, 6295 2012
- Enhanced light-extraction from a GaN waveguide using micro-pillar TiO2–SiO2 graded-refractive-index layers Frank W. Mont et al. Phys. Status Solidi A 209, 2277 2012
- Analysis of parasitic cyan luminescence occurring in GaInN blue LEDs Qifeng Shan et al. J. Appl. Phys. 112, 074512 2012
- Strong light-extraction enhancement in GaInN LEDs patterned with TiO2 micro-pillars with tapered sidewalls Ming Ma et al. Appl. Phys. Lett. 101, 141105 2012
- Polarized light emission from GaInN LEDs embedded with subwavelength aluminum wire-grid polarizers Ming Ma et al. Appl. Phys. Lett. 101, 061103 2012
- Emission pattern control and polarized light emission through patterned graded-refractive index coatings on GaInN LEDs Ming Ma et al. Opt. Express 20, 16677 2012
- Experimental and theoretical study of the optical and electrical properties of nanostructured indium tin oxide fabricated by oblique-angle deposition Adam W. Sood et al. J. Nanosci. Nanotechnol. 12, 3950 2012
- Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency Guan-Bo Lin et al. Appl. Phys. Lett. 100, 161106 2012
- Efficiency droop in AlGaInP and GaInN light-emitting diodes Jong-In Shim et al. Appl. Phys. Lett. 100, 111106 2012
- Reduction of efficiency droop in GaInN/GaN LEDs with thick AlGaN cladding layers An Mao et al. Electron. Mater. Lett. 8, 1 2012
- Temperature dependent efficiency droop in GaInN LEDs with different current densities David S. Meyaard et al. Appl. Phys. Lett. 100, 081106 2012
- Genetic algorithm for innovative device designs in high-efficiency III–V nitride LEDs Di Zhu et al. Appl. Phys. Express 5, 012102 2012
- Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate Joon Seop Kwak et al. Appl. Phys. Lett. 79, 3254 2011
- The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN Joon Seop Kwak et al. Jpn. J. Appl. Phys., Part 1 40, 6221 2001
- InGaN/GaN multi-quantum well distriuted Bragg reflector laser diode Jaehee Cho et al. Appl. Phys. Lett. 76, 1489 2000 Read more
- Characteristic of InGaN/GaN LD grown by a multi-wafer MOCVD system Y. Park et al. MRS Internet J. Nitride Semicond. Res. 4, 1 1999
- Quantum wells due to ordering in GaInP Y. Hsu et al. Appl. Phys. Lett. 73, 3905 1998 Read more