fnctId=emcsl,fnctNo=10
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- Method for fabricating a laser diode using a reflective layer including an air layer Kwang Ki Choi / Jaehee Cho US Patent 6,790,693 (filed 23 Apr. 2003, issued 14 Sep. 2004)
- GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same Joon-seop Kwak / Kyo-yeol Lee / Jae-hee Cho / Su-hee Chae US Patent 6,657,237 (filed 12 Dec. 2001, issued 2 Dec. 2003)
- Semiconductor laser diode for controlling width of carrier inflow path Jaehee Cho / Joon Seop Kwak US Patent 6,654,398 (filed 24 Jan. 2002, issued 25 Nov. 2003) Read more
- Laser diode using reflective layer including air layer and method for fabricating the same Kwang Ki Choi / Jaehee Cho US Patent 6,603,212 (filed 22 May 2002, issued 5 Aug. 2003) Read more
- Semiconductor laser diode including ridge wave guide and method of manufacturing the same Joon Seop Kwak / Jaehee Cho US Patent 6,444,486 (filed 10 Aug. 2001, issued 3 Sep. 2002) Read more
- 공기층을 포함하는 반사막을 이용한 레이저 다이오드 및 그 제조 방법 KR0387240 2003
- 리지 웨이브 가이드를 구비하는 반도체 레이저 다이오드 및 그 제조 방법 KR0378352 2003
- 회절격자를 가진 갈륨 질화물계 반도체 레이저 다이오드 및 그 제조방법 KR0319926 2001
